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| 2SK1697 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. * Suitable for DC - DC converter, motor drive, power switch, solenoid drive * * * * 2 1 4 2, 4 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** *** Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 20 0.5 1.5 0.5 1 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- PW 10 s, duty cycle 1 % When using the alumina ceramic board (12.5 x 20 x 0.7mm) Marking is "EY". 2SK1697 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.3 A VGS = 10 V * ID = 0.3 A VGS = 4 V * ID = 0.3 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 0.3 A VGS = 10 V RL = 100 --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- 20 -- -- V --------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 1.3 10 50 2.0 1.7 A A V --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- ------------------------------------------------- -- 1.8 2.5 --------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.25 0.38 -- S --------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 30 13 4 3 8 18 14 1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 0.5 A, VGS = 0 IF =0.5 A, VGS = 0, diF/dt = 50 A/s ---------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- -- 45 -- ns --------------------------------------------------------------------------------------- See characteristic curves of 2SK1336. 2SK1697 Power vs. Temperature Derating 1.6 Maximum Safe Operation Area 10 3 Drain Current I D (A) Pch (W) 1.2 1 0.3 0.1 Channel Dissipation 0.8 n s n) io i o at rea S ( r pe a R D O this by in ted i lim PW D 10 10 0 = 10 1 s s m m s C s O (1 pe ra Sh 0.4 tio ot ) n 0.03 Ta = 25C 0 50 100 Ambient Temperature 150 Ta (C) 200 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) |
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